| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39094f1396998763fb81ce213ed520bd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-086 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0415
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2016-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25d0926caf20c485c79c40429ae185b1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a10d97abb7af29b3183f807fd81de1f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17ddcf2facece429238ced7285cc2ea3 |
| publicationDate |
2018-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201824368-A |
| titleOfInvention |
Semiconductor device and method of manufacturing same |
| abstract |
Embodiments of the present invention provide a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate and has a first conductivity type. An epitaxial layer is provided on the substrate and has a second conductivity type. The first buried layer of the second conductivity type is disposed in the high potential region of the substrate, and the first buried layer of the second conductivity type has the second conductivity type. The second buried layer of the second conductivity type is located directly above the first buried layer of the second conductivity type, and the second buried layer of the second conductivity type has the second conductivity type. The top surface of the first buried layer of the second conductivity type and the top surface of the second buried layer of the second conductivity type are respectively at different distances from the top surface of the epitaxial layer. The dopant concentration of the first buried layer of the second conductivity type is smaller than that of the second buried layer of the second conductivity type. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I748239-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10593791-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I684213-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I731627-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I668864-B |
| priorityDate |
2016-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |