http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201824334-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate | 2017-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d234124be7e513dda348c4f8808368e |
| publicationDate | 2018-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201824334-A |
| titleOfInvention | Oxygen compatible plasma source |
| abstract | The described processing chamber can include a chamber housing that at least partially defines an interior region of the semiconductor processing chamber. The chamber housing can include a cover. The chamber may include a pedestal configured to support the substrate within the processing region of the chamber. The chamber may also include a first showerhead coupled to the power source. The first showerhead can be positioned within the semiconductor processing chamber between the cover and the processing region. The chamber can also include a first dielectric panel positioned within the semiconductor processing chamber between the first showerhead and the processing region. The chamber can include a second showerhead coupled to the electrical ground and positioned within the semiconductor processing chamber between the first dielectric panel and the processing region. The chamber may further include a second dielectric panel positioned within the semiconductor processing chamber between the first dielectric panel and the second showerhead. |
| priorityDate | 2016-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.