| abstract |
A package structure and a manufacturing method thereof are provided, in which a heat dissipation feature for heat dissipation is provided. Heat dissipation features include conductive vias, thermal wafers, and hot metal bodies formed in the die stack. The conductive vias, thermal wafers, and hot metal bodies formed in the die stack can be bonded to the wafer level. Device. Including wafer-to-wafer, wafer-to-wafer, and wafer-to-wafer hybrid bonding provides thermal conductivity without having to pass through bonding materials such as eutectic materials. Plasma cutting the package structure provides a smooth sidewall profile for interface with the thermal interface material. |