| abstract |
Semiconductor elements, semiconductor substrates, and methods of forming the same are disclosed. The semiconductor substrate includes a first germanium-containing layer, a single-crystal phase III-V compound semiconductor layer, and an amorphous III-V compound semiconductor layer. The first ruthenium containing layer has a first zone and a second zone. The single crystal state III-V compound semiconductor layer is disposed on the first germanium-containing layer of the first region. The amorphous III-V compound semiconductor layer is disposed on the first germanium-containing layer of the second region. |