| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78651
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0669
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66537
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66484 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate |
2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a725e863db8b20c6fcde19ac45fac63d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8224b327b34eba2aa267b1aed3a03887
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ec907ab9238d95d4ee9fb668ae802d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57d600641038cfe44d105c08564a0d10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d79cc00cb032cb87603528023865087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45d20c96427073eab6157e9e2280a6f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c2561ece7f235c60e2710919b8024d5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a8c8121cea69630f7bfb0d57519486c |
| publicationDate |
2018-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201820430-A |
| titleOfInvention |
Wraparound gate semiconductor structure with adjustable threshold voltage and method of fabricating the same |
| abstract |
The present disclosure relates to a method for manufacturing a wrap-around gate device. A semiconductor structure including a plurality of interleaved first semiconductor layers and a plurality of second semiconductor layers is provided. The first semiconductor layer and the second semiconductor layer have different material compositions. The dummy gate stack is formed above the uppermost first semiconductor layer. A first etching process is performed to remove a plurality of portions of the second semiconductor layer, the portions are not disposed under the virtual gate stack, thereby forming a plurality of holes. The first etching process has an etching selectivity between the first semiconductor layer and the second semiconductor layer. Then, a second etching process is performed to enlarge the holes. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11404417-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I773094-B |
| priorityDate |
2016-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |