| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3b74e149091c89a4825ef0db8d431755 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32917
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67242 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a76e4c0ccec28385154502008611b47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fec1108a64e656f65b332e82a63dcaac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5db6e68f21634899572c9f516d310c5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab89ec28af6964de863faf53c2a9e78a |
| publicationDate |
2018-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201820381-A |
| titleOfInvention |
Method and system for monitoring and controlling deformation of wafer substrate |
| abstract |
The invention discloses a method and a system for monitoring and controlling the deformation of a wafer substrate when plasma etching the wafer substrate. The method includes the following steps: placing a wafer substrate on a platform assembly in a processing chamber such that the entire upper surface of the wafer is exposed; passing a processing gas into the processing chamber; applying a radio frequency bias Voltage to the platform assembly; generating a plasma in the processing chamber; during the etching process, monitoring a voltage difference between the platform assembly and the processing chamber; weakening or fading after reaching a critical monitoring voltage The plasma to prevent further etching. |
| priorityDate |
2016-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |