| abstract |
A method for forming a film on a substrate, the method comprising: heating a thiodisilane according to formula (I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions ( R 1a R 1b R 1c CS) s (R 2 2 N) n (Si-Si) X x H h (I) to obtain a silicon-containing film deposited on the substrate, where: the subscripts s, n, x, h, and R 1a , R 1b , R 1c , R 2 2 , and X are as described herein. |