| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2017-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bd3948a75720e51813f32c13d814f19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83947918efd456d951989b76884fc1c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40940d9da6026ddfaafb65f8f3da3315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5630a8992ea36317ef0e08e6fce55c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b398e00debed0d1d4b34e3a30a8af477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96db0273cb5c1d803bc1020e7eea7f7b |
| publicationDate |
2018-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201812859-A |
| titleOfInvention |
System for treating a deposition reactor |
| abstract |
A system and method for treating a deposition reactor is disclosed. The system and method removes or otherwise reduces the formation of a residue in a gas phase reactor for depositing a doped metal film, such as an aluminum doped titanium carbide film or an aluminum doped tantalum carbide film. The method includes the step of exposing the reaction chamber to a treatment reactant that mitigates the formation of a material that results in the formation of a residue. |
| priorityDate |
2016-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |