| abstract |
The present invention provides a treatment liquid and a substrate cleaning method that are excellent in corrosion resistance to a metal layer included in a semiconductor device, are excellent in residue removal, and can suppress the occurrence of defects. The processing liquid is a processing liquid for semiconductor devices, which contains an oxidizing agent, an anticorrosive agent, water, and Fe, wherein the content ratio of the Fe to the oxidizing agent is 10 -10 to 10 -4 in mass ratio. |