| abstract |
Disclosed herein are compositions, methods, and systems for removing PVD TiN hard masks from 28/20 nm patterned wafers. The composition uses peroxide as an oxidant to remove the PVD TiN hard mask under slightly alkaline conditions. The composition contains large or long chain organic amines or polyalkylamines to improve the removal / etch selectivity of PVD TiN compared to CVD TiN. The composition additionally contains long-chain organic acids or amines to maintain Co compatibility. |