| abstract |
The present invention provides a supply source for the transportation of a CO-containing dopant gas composition. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, each of which is provided under a controlled volume ratio to ensure optimal carbon ion implantation performance. The composition can be packaged into a dopant gas package consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition may be pre-mixed and introduced from a single source, and the single source may be activated according to the negative pressure conditions achieved, so that the dopant mixture flows from the internal volume of the device into the ion source device along the drainage channel. |