| abstract |
An integrated circuit includes a first transistor, a second transistor, and a dummy gate structure. The first transistor includes a first gate structure. The first gate structure includes a first gate insulating layer including a high-k dielectric material and a first gate electrode. The second transistor includes a second gate structure. The second gate structure includes a second gate insulating layer including the high-k dielectric material and a second gate electrode. The dummy gate structure is disposed between the first transistor and the second transistor and substantially does not include the high-k dielectric material. |