| abstract |
The invention provides a method for etching a semiconductor substrate, which is an etching method for selectively removing a second layer from a semiconductor substrate having a first layer and a second layer, wherein the first layer includes germanium (Ge), and the first The two layers include at least one metal element selected from the group consisting of nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), and the etching method of the semiconductor substrate is to use an etching solution containing a specific acid compound Contact with the second layer to remove the second layer. |