| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-4824
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2017-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6545cd339b38c0e657eed3c2207f5d5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d10a9d59546470b3c507de650ef45a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7eebb671bffba64c4e27625ab72b39e |
| publicationDate |
2018-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201803118-A |
| titleOfInvention |
Semiconductor device and method of manufacturing same |
| abstract |
An object of the present invention is to provide a semiconductor device which can reduce the influence of noise without complicating the process and increasing the area of the wafer.nn n n The semiconductor device according to the embodiment includes a semiconductor substrate having a first surface and a second surface, and a drain region disposed on a second surface side of the semiconductor substrate and having a first conductivity type; The drift region is disposed on the first surface side of the substrate region in the semiconductor substrate, and has a first conductivity type; and the base region is disposed on the main surface side of the drift region in the semiconductor substrate, and has a second conductivity Type; source field, which is set on the main surface of the semiconductor substrate, sandwiches the base field with the drift domain, has a first conductivity type; gate electrode, its edge and the field of drift and source The base region of the base region is sandwiched between the insulating edges; the wiring is provided on the first surface and electrically connected to the source region; and the first conductive film is disposed on the first surface. The side is opposite to the wiring insulation side and electrically connected to the substrate area. |
| priorityDate |
2016-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |