| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6622
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53271 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7687 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2017-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b81df6fa0d4a7ee2946cd82e1925e5d7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e324a849ee69c959c14db4b6819d9009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a4ec091444ab85eb973da178dcd35cd |
| publicationDate |
2018-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201803067-A |
| titleOfInvention |
Low capacitance through the substrate perforation structure |
| abstract |
A device and method for forming a low-capacitance through-hole structure of a substrate are disclosed herein. An exemplary device includes: an opening formed in a substrate, wherein the opening has at least one side wall; a first dielectric layer formed at least on the side wall of the opening; a first conductor, which At least formed on the first dielectric layer; a second dielectric layer formed on at least the first conductor; and a second conductor formed on at least one side wall of the second dielectric layer on. |
| priorityDate |
2016-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |