patent/TW-201801193-A

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201801193-A

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
classificationCPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10357
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66446 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7789 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8256 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
filingDate	2017-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_748f7f35a80ac5a49a6fc3daf9774ed6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbf80f3b6fae3e5a9441f77e29cdffea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25bbfb8c0b2a5cca598af3c89eef52e0
publicationDate	2018-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	TW-201801193-A
titleOfInvention	Field effect transistor comprising indium gallium arsenide channel and method for enhancing the performance of field effect transistor
abstract	According to an embodiment of the inventive concept, a method of fabricating a field effect transistor device having a set-to-band tunneling leakage current and a maximum supply voltage includes: determining In x Ga 1-x As based on inter-band tunneling leakage and maximum supply voltage The value of x; and the formation of a channel using In x Ga 1-x As, where x is not 0.53.
priorityDate	2016-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557764 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID31170

Total number of triples: 46.