Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5343449906e9a0e9206b25abb477454e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01106 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-511 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02538 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0251 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
filingDate |
2017-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1224e64f0edb0922f2901260afeb2802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ad8175e113af5f7ce22848142393ba2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_266b75c6f6022cc6a660910fac95e5d9 |
publicationDate |
2018-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-201801151-A |
titleOfInvention |
Layer structure of epitaxial metal oxide for buffering of epitaxial III-V layer |
abstract |
The system and method described herein are for growing epitaxial metal oxide to serve as a buffer for epitaxial III-V layers. The layer structure includes a base layer and a first rare earth metal oxide layer epitaxially grown on the base layer. The first rare earth metal oxide layer includes the first rare earth metal element and oxygen, and has a skutterskite crystal structure. The layer structure also includes a metal oxide layer, which is directly epitaxially grown on the first rare earth metal oxide layer. The metal oxide layer includes a first cationic element selected from the third group and oxygen, and has a skutterite crystal structure. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11271109-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I715311-B |
priorityDate |
2016-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |