| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0635
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G05F1-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66234 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-96
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate |
2016-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_292d1d08e0a15726864e9b26da096d4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18d3774b9418001a0362712c9b546091 |
| publicationDate |
2017-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201743431-A |
| titleOfInvention |
Semiconductor component and manufacturing method thereof |
| abstract |
The present invention discloses a method of fabricating a semiconductor device. First, a substrate is provided, and then a bipolar junction transistor (BJT) is formed on the substrate to form a MOS transistor on the substrate and electrically connected to the bipolar junction transistor to form a resistor. And electrically connecting the MOS semiconductor transistor to form a dielectric layer on the substrate and covering the bipolar junction transistor, the MOS transistor and the resistor, and forming an oxide semiconductor field effect transistor The oxynitride transistor and the resistor are electrically connected to the electrical layer. |
| priorityDate |
2016-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |