| abstract |
The semiconductor device has a semiconductor substrate (SB) and a wiring structure formed on the main surface of the semiconductor substrate (SB). The uppermost first wiring layer among the plurality of wiring layers included in the wiring structure includes a pad (PD), and the pad (PD) has a first field for bonding copper wires and a probe for bonding The second field of contact. The second wiring layer that is lower than the first wiring layer among the plurality of wiring layers included in the wiring structure includes the wiring (M6) disposed directly under the pad (PD), and the wiring (M6) is The conductor pattern in the same layer as the wiring (M6) is not formed directly under the first field of the pad (PD). |