http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201742142-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2017-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75832607ac75b77801e3cbd068f13653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5353149191fad9f7f07fe688f8514b2 |
| publicationDate | 2017-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201742142-A |
| titleOfInvention | Etching method |
| abstract | It is an object of the present invention to provide an etching method for controlling the balance of hydrogen atoms, fluorine atoms and carbon atoms supplied to a cerium oxide etching region in a low temperature environment by a gas flow rate. The method includes a cooling step of controlling a temperature of the object to be treated contained in the processing container to -20 ° C or lower, and a generating step of generating a processing gas containing hydrogen atoms, fluorine atoms, carbon atoms, and oxygen atoms in the processing container Plasma; and an etching step using a plasma etched region. The processing gas is a mixture of a first gas, a second gas, and a gas containing an oxygen atom. The gas in which the first gas and the second gas are mixed contains a hydrogen atom, a fluorine atom, and a carbon atom. Each of the first gas and the second gas contains at least one of a hydrogen atom and a fluorine atom. The ratio of the number of hydrogen atoms contained in the first gas to the number of fluorine atoms is different from the ratio of the number of hydrogen atoms contained in the second gas to the number of fluorine atoms. |
| priorityDate | 2016-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.