http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201741503-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_517a04cc4bffc3d216b19f45c9bde10d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-18 |
| filingDate | 2017-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9698803252ae727a6cdc348c18b032c1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57801bd38026574a3e2122150ec8d17a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e47bd11e85a46bb6f32074a9bd143836 |
| publicationDate | 2017-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201741503-A |
| titleOfInvention | Etching solution composition |
| abstract | The present invention relates to an etching liquid composition comprising hydrogen peroxide, an etching inhibitor, a chelating agent, an etching additive, a hydrogen peroxide stabilizer, and a pH adjusting agent, which prevents an oxide semiconductor from being contained by not containing a fluorine compound and having a pH of 4 or more The etching process containing copper and molybdenum films is etched to minimize defects that may occur in the etching process. Further, since an insulating protective layer (etching stop layer) process which is conventionally applied to ensure stable electrical characteristics of an oxide semiconductor is not required, the cost at the time of manufacturing the oxide semiconductor TFT can be reduced. |
| priorityDate | 2016-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 115.