| abstract |
A fin structure of a semiconductor device, such as a fin field effect transistor (FinFET) structure, has a first semiconductor layer, a second semiconductor layer, and an air gap between the first semiconductor layer and the second semiconductor layer. Air separation prevents leakage. The fin field effect transistor device can form a source/drain fin by first performing boring and then epitaxial growth, and the growth can begin above a tubular air space. |