http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201737319-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_da1568abf4abdfb458e0e2b839d41d40 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate | 2017-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6676560f9daa9933e8a2d1d06fad240d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cff5cf952d9bf266e4cdf493c705bd0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a232ad9e4b68b93749bda608ef1b5e5 |
| publicationDate | 2017-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201737319-A |
| titleOfInvention | Magnetic memory device and its forming technology |
| abstract | A method can include: providing a device stack, the device stack including a sidewall portion and extending over a substrate, the device stack further comprising a plurality of metal layers; conformally depositing an interface layer on the device stack using an atomic layer deposition process, The interface layer includes a first insulator material; an encapsulation layer is deposited on the interface layer, the encapsulation layer includes a second insulator material; and an interlayer dielectric is deposited to be disposed on the encapsulation layer, the inter-layer dielectric comprising a third Insulator material. |
| priorityDate | 2016-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.