| abstract |
The present invention relates to a semiconductor device and a method of manufacturing the same, which imparts stable electrical characteristics to a transistor using an oxide semiconductor film. Further, the transistor to which the oxide semiconductor film is applied has excellent electrical characteristics. Further, the present invention provides a highly reliable semiconductor device having the transistor. In a transistor having a multilayer film in which an oxide semiconductor film and an oxide film are laminated, a gate electrode, and a gate insulating film, the multilayer film is provided to overlap the gate electrode via a gate insulating film, and the multilayer film has a first angle formed by a lower surface of the oxide semiconductor film and a side surface of the oxide semiconductor film, and a second angle formed by a lower surface of the oxide film and a side surface of the oxide film, and a first angle It is smaller than the second angle and is set to an acute angle. In addition, a semiconductor device is fabricated by using the transistor. |