| abstract |
In a method of fabricating a semiconductor device, a dummy gate structure is formed on a substrate, a first insulating layer is formed on the dummy gate structure, and a dummy gate structure is removed to form a gate space in the first insulating layer, at the gate Forming a first conductive layer in the space to form a reduced gate space, filling a second conductive layer made of a different material from the first conductive layer into the reduced gate space, and filling the first conductive layer and the second conductive The layer is recessed to form a first gate recess, and a third conductive layer is formed on the first conductive layer and the second conductive layer in the first gate recess, after recessing the filled first conductive layer and the second conductive layer The second conductive layer protrudes from the first conductive layer. |