| abstract |
The present invention provides a highly reliable semiconductor device suitable for miniaturization and high integration. The semiconductor device includes: a first insulator; a transistor on the first insulator; a second insulator on the transistor; a first conductor embedded in the opening of the second insulator; a barrier layer on the first conductor; a second insulator on the second insulator and the barrier layer; and a second conductor on the third insulator, wherein the first insulator, the third insulator and the barrier layer are resistant to oxygen and hydrogen, and the second insulator includes an excess oxygen region, and the second insulator The crystal includes an oxide semiconductor, and the barrier layer, the third insulator, and the second conductor are used as a capacitor. |