| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2330-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0275 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C7-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C19-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-2096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3648 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-20 |
| filingDate |
2006-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80a4742286a2ed96de711ed72ed8293c |
| publicationDate |
2017-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201734994-A |
| titleOfInvention |
Semiconductor device, display device, and electronic device |
| abstract |
The present invention provides a semiconductor device that stably operates in a case where a failure due to noise is low, a power consumption is low, and a characteristic change is small; a display device including the semiconductor device; and an electronic device including the display device. The output terminal is connected to the power line to reduce the potential change of the output terminal. In addition, due to the capacitance of the transistor, the gate electrode potential of a transistor is kept turned on. In addition, variations in transistor characteristics are reduced by signal lines for reverse biasing. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I636449-B |
| priorityDate |
2005-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |