http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201733129-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate | 2013-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
publicationDate | 2017-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201733129-A |
titleOfInvention | Semiconductor device and method of manufacturing same |
abstract | In order to obtain a structure in which the oxide semiconductor layer through which the carrier flows is not in contact with the gate insulating film, an buried channel structure in which the oxide semiconductor layer through which the carrier flows is far from the gate insulating film containing germanium is used. Specifically, a buffer layer is provided between the gate insulating film and the oxide semiconductor layer. As the oxide semiconductor layer and the buffer layer, a material containing indium and a metal element is used. The composition of indium relative to gallium in the oxide semiconductor layer is higher than the composition of indium in the buffer layer with respect to gallium. Further, the thickness of the buffer layer is smaller than the thickness of the oxide semiconductor layer. |
priorityDate | 2012-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 61.