| abstract |
Substrates, assemblies, and techniques for implementing stackable switching devices are disclosed herein. For example, in some embodiments, a device can include a source, a drain, and a reactive layer between the source and the drain. The source, the drain, and the reactive layer may be on top of a support substrate such as a semiconductor substrate, and the contact region may modulate the resistance of the reactive layer. In an example, the contact area is a Schottky contact area and the reactive layer is a resistive switching layer. |