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filingDate 2016-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201732931-A
titleOfInvention Semiconductor structure and manufacturing method thereof
abstract A semiconductor structure includes a substrate, at least a first gate structure, at least a first spacer layer, at least one source drain structure, and a conductive plug. The first gate structure is disposed on the substrate. The first spacer layer is disposed on at least one sidewall of the first gate structure. The source drain structure is adjacent to the first spacer layer. The conductive plug is electrically connected to the source drain structure, wherein there is an aperture between the conductive plug and the first spacer.
priorityDate 2015-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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