| abstract |
Embodiments of the present invention disclose a semiconductor device, a fin field effect transistor device, and a method of forming the same. According to some embodiments, a semiconductor component includes a substrate, a first gate stack, a first dielectric layer, a shielding layer, and a connector. The first gate stack is located above the substrate. The first dielectric layer is located on a side of the first gate stack, wherein a top surface of the first gate stack is lower than a top surface of the first dielectric layer to provide over the first gate stack The first depression. The shielding layer is on a surface of the first recess and extends onto the top surface of the first dielectric layer. The connector passes through the shielding layer and is electrically connected to the first gate stack. |