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filingDate 2016-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1625d1e75be42e0ed2b5614badf3509
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publicationDate 2017-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201732887-A
titleOfInvention Method of forming semiconductor device
abstract Embodiments of the invention relate to methods of fabricating semiconductor components. The method includes forming a layer of flowable material over the substrate. The substrate has a first region and a second region. The upper surface of the flowable material layer in the first region is higher than the upper surface of the flowable material layer in the second region. The method also includes forming a plurality of layers of flowable material in the first region and performing an annealing process to reflow the layer of flowable material, wherein the plurality of grooves are filled with a layer of flowable material.
priorityDate 2016-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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