| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_816076003de7deb20575cd19f768bf36 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80894
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-562 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2016-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0daa406bd03ead7f8a4a5426fe908687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bc5f8cb36771c2264aa865c7b3cda1e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc409ac978a5f33c6469b91e61e0cb5f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_963690706e8421f08cdb08b331f09e7a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a798358c0b508c530790e02fe1e5db06 |
| publicationDate |
2017-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201732874-A |
| titleOfInvention |
Method for improving wafer planarity and bonded wafer assembly manufactured thereby |
| abstract |
A method for improving the planarity of a semiconductor wafer and an assembly manufactured by the method. In a preferred embodiment of the method, a compressed PECVD oxide layer (such as SiO2) having a predetermined thickness or pattern is deposited on a second semiconductor wafer having a desired degree of warpage or curvature. On the surface. The thickness or pattern of the deposited oxide layer is determined by the measured warpage or curvature of the semiconductor wafer. The compressed oxide layer induces an offset compressive force on the second surface of the semiconductor wafer to reduce the warpage and the degree of curvature across a major surface of the semiconductor wafer. |
| priorityDate |
2015-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |