http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201732072-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d610873487d2bc9668c04d7c2ec8e6c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_70191c98719c658f3f5203fad1731395 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 |
| filingDate | 2016-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f35f794c310606a0350a7a883c71823 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e4318e1cca138fc0712c1d0daaa80cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f65e0c3fbee32c47280dc217ec515829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cb71676988d13596b7e952983a20ceb |
| publicationDate | 2017-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201732072-A |
| titleOfInvention | Method for manufacturing tantalum nitride film and tantalum nitride film |
| abstract | An object of the present invention is to provide a method for producing a tantalum nitride film which has high hydrofluoric acid resistance, high moisture resistance, and a suitable internal layer on a substrate controlled to 250 ° C or lower. Stress, the present invention provides a method for producing a tantalum nitride film 30 which is produced by a plasma chemical vapor deposition method on a substrate 20 having a temperature of 250 ° C or less using organic decane gas as a material gas. a tantalum nitride film 30 having specific hydrofluoric acid resistance, moisture resistance and internal stress, wherein a treatment gas having a hydrogen reduction gas of 200 to 2000 volume flow is used with respect to 1 volume flow of organic decane gas. The pressure in the processing chamber 40 in which the substrate 20 is housed is adjusted to a range of 35 to 400 Pa, and the high-frequency power density applied to the electrodes provided in the processing chamber 40 is adjusted to be in the range of 0.2 to 3.5 W/cm 2 . |
| priorityDate | 2016-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.