| abstract |
Provided herein are methods for forming metal contacts having a tungsten liner layer. In some embodiments, a method of treating a substrate includes exposing a substrate to a plasma in a first substrate processing chamber to deposit a tungsten liner layer, the plasma being formed from a first gas, the first gas Including a metal organic tungsten precursor gas or a fluorine-free tungsten halogen precursor, wherein the tungsten liner layer is deposited on top of and within the dielectric layer, the feature being formed in the first surface of the dielectric layer of the substrate; Transferring the substrate to the second substrate processing chamber without exposing the substrate to an atmosphere; and exposing the substrate to a second gas to deposit a tungsten filled layer atop the tungsten liner layer, the second gas Includes tungsten fluoride precursors. |