| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0694 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 |
| filingDate |
2016-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef3746a8e9a7dc93c4cd96f2dfa5f4a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d650380aa95dfa3df3b52961cd9e8418 |
| publicationDate |
2017-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201732066-A |
| titleOfInvention |
Photonic device, vapor deposition process for depositing layers in photonic devices, and photoactive materials |
| abstract |
A deposition process is disclosed herein to deposit a thin film on a substrate in a reaction space comprising a dielectric transition metal compound phase and a conductive or semiconductive transition metal compound phase. The deposition process can include multiple super cycles. Each supercycle can include a dielectric transition metal compound sub-cycle and also an atomic cycle. The dielectric transition metal compound sub-cycle can include contacting the substrate with a dielectric transition metal compound. Still atomic cycling can include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconductive transition metal compound phase. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I807195-B |
| priorityDate |
2015-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |