| abstract |
Depicting a device comprising: a transistor having a gate electrode, a source region, and a drain region; and a threshold switch adjacent to one of the source or drain regions, wherein the threshold switch is a multilayer having a chalcogenide material Device. Depicting a device comprising: a transistor having a gate electrode, a source region, and a drain region; and adjacent one of one or more layers and a source or drain region through the contact/via and the metal A threshold switch of adjacent metal layers, wherein the threshold switch is a multilayer device, one of which is a chalcogenide based alloy. |