| abstract |
Electrical terminals and related memory structures, devices, and methods for magnetoresistive random access memory (MRAM) devices are disclosed herein. For example, an electrical terminal for an MRAM device can include: a meandering region; a barrier region formed by a first material; and a second material formed and disposed in the meandering region and the barrier region a passivation region therebetween, wherein the second material comprises tantalum nitride and is different from the first material. |