http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201727896-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
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filingDate 2016-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d83ef358a0af678144b3e8a5988f77d
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publicationDate 2017-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201727896-A
titleOfInvention Semiconductor device structure
abstract The present disclosure provides a semiconductor device structure and a method of forming the same. The semiconductor device structure includes a source structure, at least within the semiconductor substrate. The semiconductor device structure also includes a channel structure on the semiconductor substrate. The source structure is partially covered by the channel structure. The semiconductor device structure also includes a drain structure covering the channel structure. The drain structure and the source structure have different conductivity types. A portion of the channel structure is sandwiched between the source structure and the drain structure. Furthermore, the semiconductor device structure includes a gate stack that partially covers the channel structure.
priorityDate 2016-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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