| abstract |
A semiconductor structure includes a substrate, at least a first gate structure, at least one source drain structure, at least a lower conductor, and a first dielectric layer. The first gate structure is disposed on the substrate. The source drain structure is disposed on the substrate. The lower conductor is electrically connected to the source drain structure, wherein the lower conductor has an upper portion and a lower portion, and the lower portion is located between the upper portion and the source drain structure, and the aperture is located between at least an upper portion of the lower conductor and the first gate structure. The first dielectric layer is disposed at least between the lower portion of the lower conductor and the first gate structure. |