| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B2210-56 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02694
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B11-0683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B11-0625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01B11-0675 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01B11-06 |
| filingDate |
2016-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc3318fc435483819d74187b03c68423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4337a8e2b5e2cfe551e1a4274c035a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37501fe15b3c34eef3d6caf119950143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7665798a4d2162b7f01caa8bdea28eb |
| publicationDate |
2017-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201727788-A |
| titleOfInvention |
Metrology system and measurement method using the same |
| abstract |
A method for thickness measurement comprising forming an implanted region within a semiconductor substrate. A semiconductor layer is formed on the implanted region of the semiconductor substrate. The regulated free carrier is generated in the implanted region of the semiconductor substrate. A probe beam is provided onto the implanted region of the semiconductor layer and the semiconductor substrate having the regulated free carrier. The probe beam reflected from the semiconductor layer and the implanted region is detected to determine the thickness of the semiconductor layer. |
| priorityDate |
2016-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |