http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201724162-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2016-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1312bb782ced042ef67a27c423aa9b6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ebdfbf7429253fcf1ed46261652387c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec0c7639355d2fe1a5a21a9b76c97373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f07d38277837556d07b38971cd52e4bf |
| publicationDate | 2017-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201724162-A |
| titleOfInvention | Processing method of processed object |
| abstract | An object of the present invention is to provide a method for achieving control of a minimum line width with high precision, reproducibility of a minimum line width, and the like in pattern formation on a target object. The solution of the present invention is to provide a process for forming a first process for supplying a first gas containing an amine-based decane-based gas into a processing chamber of a plasma processing apparatus, and a second process for After the implementation of the first process, the space in the processing container is rinsed; the third process is the plasma of the second gas containing the oxygen-containing gas in the processing container after the execution of the second process; and the fourth process is the third process. After the process is carried out, the space in the processing container is rinsed; the sequence is repeated to form a tantalum oxide film in the processing container: the preparation process is performed before the object to be processed is stored in the processing container; and the processing process is carried out. The object to be processed in the processing container is subjected to etching treatment; the preparation process is performed before the processing process; the forming process is performed in the preparation process and is performed in the processing process; and the first process does not generate the plasma of the first gas. |
| priorityDate | 2015-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.