| abstract |
A semiconductor device capable of holding data for a long period of time is provided. A semiconductor device comprising: a first transistor including a first insulator, a first oxide semiconductor, a first gate, and a second gate; and a second oxide semiconductor, a third gate, and a fourth gate a second transistor; and a node, the first gate and the second gate have regions overlapping each other across the first oxide semiconductor, and the third gate and the fourth gate have regions overlapping each other via the second oxide semiconductor The first oxide semiconductor and the second gate have regions overlapping each other across the first insulator, and one of the source and the drain of the first transistor, the first gate and the fourth gate are electrically connected to the node, The first insulator has a function of holding a charge. |