| abstract |
The present invention discloses a Si-containing film-forming composition. The Si-containing film-forming composition comprises a Si-N-containing precursor having the formula: R1R2N-SiHR3-(CH2)n-SiH2R4, wherein R1 and R2 are each independently H, C1-C6 alkyl or C3- C20 aryl, heterocyclic or cycloalkyl; R3 and R4 are each independently H; amino-NRR', wherein R and R' are each independently H, C1-C6 alkyl or C3-C20 aryl, a heterocyclic or cycloalkyl group; or a -N(R)C(Me)=NR' group, wherein R and R' are each independently H, C1-C6 alkyl or C3-C20 aryl, heterocycle or ring Alkyl; and n = 1 or 2; the constraint is that when n = 2, R1 = R2 ≠ Et, R3 ≠ NEt2, R4 ≠ H or NEt2. The present invention also discloses a method for forming a Si-N-containing precursor based on a reactant having a Si-CH2-Si backbone or a Si-CH2-CH2-Si backbone and NH3, RNH2 or anthracene. The catalyst cross-dehydrogenates wherein R can each independently be H, C1-C6 alkyl or C3-C20 aryl, heterocyclic or cycloalkyl. |