| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_904ea8c0e72c4fa19cb90807e57b2c8e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-501 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-507 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50 |
| filingDate |
2012-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c268a2d524060aab878580d2644f66fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25d37f4ddee792b971ad9a88fc73339b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a21b4ee7253ebd543fcfbfbb6570c8b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bd48c40bde1b5d19ede786ed8c9f92c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41b058f69081e4b27bcf8029154f5901
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8f90a70e94bd1d123b18d43e5fede23 |
| publicationDate |
2017-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201717436-A |
| titleOfInvention |
Method of processing a semiconductor structure |
| abstract |
A method in accordance with an embodiment of the present invention includes providing a wafer comprising a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride sandwiched between an n-type region and a p-type region Light-emitting layer. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into a plurality of light emitting devices. |
| priorityDate |
2011-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |