| abstract |
The invention provides that the dissolution contrast energy can be large as the positive photoresist material and the negative photoresist material, and the edge roughness can be small, and the placement time between the post-exposure post-exposure baking and the development does not occur. A photoresist material of varying size, and a pattern forming method using the material. A photoresist material comprising a phosphonium salt represented by the following formula (A), and a base polymer. □ |