| abstract |
A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) TiN and/or TaN, wherein the CMP composition The object (Q) comprises (E) inorganic particles, (F) at least one organic compound comprising an amine group and an acid group (Y), wherein the compound comprises n amine groups and at least n+1 acid protons, wherein n is An integer of □1. (G) at least one oxidizing agent in an amount of from 0.2 to 2.5% by weight based on the total weight of the individual CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH greater than 6 and less than 9. |