| abstract |
A method of forming a semiconductor device includes etching a substrate, thereby forming two first trenches separated by a fin. The first trench is filled with an isolation layer. A dielectric layer is deposited over the fins and the isolation layer. A second trench is formed in the dielectric layer over the channel region of the semiconductor component, the second trench exposing the isolation layer. The isolation layer is etched through the second trench, thereby exposing to the upper portion of the fin in the channel region of the semiconductor component. A dummy gate is formed in the second trench on the isolation layer and the upper portion of the fin is bonded. |