| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2016-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee942d3fa9262b08a3e94d32710822f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_702e8405504ded10775c5cf96360d005 |
| publicationDate |
2017-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201715576-A |
| titleOfInvention |
Method for forming interconnects for semiconductor components |
| abstract |
A method for forming an interconnect for a semiconductor device includes: forming a lower insulating layer and a lower interconnect on a semiconductor substrate; forming an insulating pattern layer on the lower interconnect by self-assembly; forming on the insulating pattern layer An interlayer insulating layer and a trench mask; forming a preliminary via hole by removing a portion of the interlayer insulating layer so as to be able to expose the insulating pattern layer; forming a trench by etching the interlayer insulating layer by using a trench mask; The insulating pattern layer in the preliminary via hole is selectively etched to form a via hole so as to be able to expose the lower interconnect line; and the trench and the via hole are filled with a conductive material. |
| priorityDate |
2015-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |