| abstract |
Chemical mechanical polishing (CMP) compositions, methods, and systems are used to polish patterned semiconductor wafers. The CMP composition comprising the millbase and the water soluble aluminum compound additive of such pH > 7 inhibits the removal rate of the CMP stop layer (containing a tantalum layer such as tantalum nitride, tantalum oxide or tantalum carbide). The CMP composition optionally contains a surfactant that aids in wetting the surface; a corrosion inhibitor that provides corrosion inhibition to the metal lines, vias or trenches; and a pH adjuster to adjust the pH of the CMP polishing composition. |